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 MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
8-Bit Addressable Latch 1-of-8 Decoder
High-Performance Silicon-Gate CMOS
The MC54/74HC259 is identical in pinout to the LS259. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. The HC259 has four modes of operation as shown in the mode selection table. In the addressable latch mode, the data on Data In is written into the addressed latch. The addressed latch follows the data input with all non-addressed latches remaining in their previous states. In the memory mode, all latches remain in their previous state and are unaffected by the Data or Address inputs. In the one-of-eight decoding or demultiplexing mode, the addressed output follows the state of Data In with all other outputs in the LOW state. In the Reset mode all outputs are LOW and unaffected by the address and data inputs. When operating the HC259 as an addressable latch, changing more than one bit of the address could impose a transient wrong address. Therefore, this should only be done while in the memory mode. * * * * * * Output Drive Capability: 10 LSTTL Loads Outputs Directly Interface to CMOS, NMOS, and TTL Operating Voltage Range: 2 to 6 V Low Input Current: 1 A High Noise Immunity Characteristic of CMOS Devices In Compliance with the Requirements Defined by JEDEC Standard No. 7A * Chip Complexity: 202 FETs or 50.5 Equivalent Gates
MC54/74HC259
J SUFFIX CERAMIC PACKAGE CASE 620-10
1
16
16 1
N SUFFIX PLASTIC PACKAGE CASE 648-08
16 1
D SUFFIX SOIC PACKAGE CASE 751B-05
ORDERING INFORMATION MC54HCXXXJ MC74HCXXXN MC74HCXXXD Ceramic Plastic SOIC
PIN ASSIGNMENT
A0 A1 A2 Q0 Q1 Q2 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 VCC RESET ENABLE DATA IN Q7 Q6 Q5 Q4
LOGIC DIAGRAM
Q3 GND ADDRESS INPUTS 1 A0 2 A1 3 A2 4 Q0 5 Q1 6 Q2 7 Q3 9 Q4 10 Q5 11 Q6 12 Q7
MODE SELECTION TABLE
NONINVERTING OUTPUTS Enable L H L H Reset H H L L Mode Addressable Latch Memory 8-Line Demultiplexer Reset
DATA IN
13
15 RESET 14 ENABLE PIN 16 = VCC PIN 8 = GND
LATCH SELECTION TABLE
Address Inputs C L L L L H H H H B L L H H L L H H A L H L H L H L H Latch Addressed Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7
10/95
(c) Motorola, Inc. 1995
1
REV 6
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* Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. Derating -- Plastic DIP: - 10 mW/_C from 65_ to 125_C Ceramic DIP: - 10 mW/_C from 100_ to 125_C SOIC Package: - 7 mW/_C from 65_ to 125_C For high frequency or heavy load considerations, see Chapter 2 of the Motorola High-Speed CMOS Data Book (DL129/D). Vin = VCC or GND 6.0 8 80 160 A Iout = 0 A NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High-Speed CMOS Data Book (DL129/D).
IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII
MAXIMUM RATINGS*
MOTOROLA
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
RECOMMENDED OPERATING CONDITIONS
MC54/74HC259
Symbol
Vin, Vout
Symbol
Symbol
VCC
Vout
Tstg
ICC
Iout
VCC
Vin
PD
TL
VOH
tr, tf
Iin
VOL
ICC
TA
VIH
VIL
Iin
Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package) (Ceramic DIP)
Storage Temperature
Power Dissipation in Still Air, Plastic or Ceramic DIP SOIC Package
DC Supply Current, VCC and GND Pins
DC Output Current, per Pin
DC Input Current, per Pin
DC Output Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Supply Voltage (Referenced to GND)
Input Rise and Fall Time (Figure 1)
Operating Temperature, All Package Types
DC Input Voltage, Output Voltage (Referenced to GND)
DC Supply Voltage (Referenced to GND)
Maximum Quiescent Supply Current (per Package)
Maximum Input Leakage Current
Maximum Low-Level Output Voltage
Minimum High-Level Output Voltage
Maximum Low-Level Input Voltage
Minimum High-Level Input Voltage
Parameter
Parameter
Parameter
Vin = VIH or VIL |Iout| 20 A
Vin = VIH or VIL |Iout| 20 A
Vin = VCC or GND
Vin = VIH or VIL |Iout| |Iout|
Vin = VIH or VIL |Iout| |Iout|
Vout = 0.1 V or VCC - 0.1 V |Iout| 20 A
Vout = 0.1 V or VCC - 0.1 V |Iout| 20 A
v
v
v
v
VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V
Test Conditions
- 0.5 to VCC + 0.5
- 1.5 to VCC + 1.5
- 65 to + 150
- 0.5 to + 7.0
2 - 55 Min 2.0 Value
v 4.0 mA v 5.2 mA
v 4.0 mA v 5.2 mA
0 0 0
0
50
25
20
260 300
750 500
+ 125
1000 500 400
VCC
Max
6.0
VCC V
6.0
4.5 6.0
2.0 4.5 6.0
4.5 6.0
2.0 4.5 6.0
2.0 4.5 6.0
2.0 4.5 6.0
Unit
Unit
mW
mA
mA
mA
_C
_C
_C
ns
V
V
V
V
V
- 55 to 25_C
0.1
1.5 3.15 4.2
0.26 0.26
3.98 5.48
0.1 0.1 0.1
1.9 4.4 5.9
0.3 0.9 1.2
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND (Vin or Vout) VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
Guaranteed Limit
v 85_C v 125_C
High-Speed CMOS Logic Data DL129 -- Rev 6 1.0 1.5 3.15 4.2 0.33 0.33 3.84 5.34 0.1 0.1 0.1 1.9 4.4 5.9 0.3 0.9 1.2
v
1.0 1.5 3.15 4.2 0.40 0.40 3.70 5.20 0.1 0.1 0.1 1.9 4.4 5.9 0.3 0.9 1.2
v
Unit
A V V V V
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NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High-Speed CMOS Data Book (DL129/D). * Used to determine the no-load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the Motorola High-Speed CMOS Data Book (DL129/D). NOTES: 1. For propagation delays with loads other than 50 pF, see Chapter 2 of the Motorola High-Speed CMOS Data Book (DL129/D). 2. Information on typical parametric values can be found in Chapter 2 of the Motorola High-Speed CMOS Data Book (DL129/D).
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AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)
Symbol tPLH, tPHL tPLH, tPHL tPLH, tPHL tTLH, tTHL tPHL Cin Maximum Input Capacitance Maximum Output Transition Time, Any Output (Figures 1 and 6) Maximum Propagation Delay, Reset to Output (Figures 4 and 6) Maximum Propagation Delay, Enable to Output (Figures 3 and 6) Maximum Propagation Delay, Address Select to Output (Figures 2 and 6) Maximum Propagation Delay, Data to Output (Figures 1 and 6) Parameter VCC V 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 -- - 55 to 25_C 155 31 26 200 40 34 215 43 37 185 37 31 10 75 15 13 Guaranteed Limit
High-Speed CMOS Logic Data DL129 -- Rev 6
TIMING REQUIREMENTS (Input tr = tf = 6 ns)
Symbol
CPD
tr, tf
tsu
tw
th
Power Dissipation Capacitance (Per Package)*
Maximum Input Rise and Fall Times (Figure 1)
Minimum Pulse Width, Reset or Enable (Figure 3 or 4)
Minimum Hold Time, Enable to Address or Data (Figure 5)
Minimum Setup Time, Address or Data to Enable (Figure 5)
Parameter
3 VCC V 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 - 55 to 25_C Typical @ 25C, VCC = 5.0 V 1000 500 400 100 20 17 80 16 14 5 5 5 Guaranteed Limit 1000 500 400 100 20 17 125 25 21 195 39 33 250 50 43 270 54 46 230 46 39 10 95 19 16 30 5 5 5 1000 500 400 120 24 20 150 30 26 235 47 40 300 60 51 325 65 55 280 56 48 110 22 19 10 5 5 5
v 85_C v 125_C
v 85_C v 125_C
MC54/74HC259
MOTOROLA Unit Unit pF pF ns ns ns ns ns ns ns ns ns
MC54/74HC259
SWITCHING WAVEFORMS
DATA IN VCC GND VCC 50% tr DATA IN tPLH OUTPUT Q 90% 50% 10% tTLH tTHL 90% 50% 10% tPHL tPHL OUTPUT Q 50% tPLH tf VCC GND ADDRESS SELECT 50% GND GND VCC
Figure 1.
Figure 2.
VCC DATA IN tw ENABLE 50% tPHL OUTPUT Q tw 50% 50% tPLH GND GND VCC RESET tPHL OUTPUT Q 50% 50% DATA IN
VCC GND tw VCC GND
Figure 3.
Figure 4.
TEST POINT DATA IN OR ADDRESS SELECT ENABLE VCC 50% th(H) tsu 50% GND * Includes all probe and jig capacitance tsu th(L) GND VCC OUTPUT DEVICE UNDER TEST
CL*
Figure 5.
Figure 6. Test Circuit
MOTOROLA
4
High-Speed CMOS Logic Data DL129 -- Rev 6
MC54/74HC259
EXPANDED LOGIC DIAGRAM
13 4
DATA INPUT
D
Q0
D
5
Q1
D
6
Q2
D A0 ADDRESS INPUTS A1 A2 3 TO 8 DECODER
7
Q3
D
9
Q4
D ENABLE 14
10
Q5
D
11
Q6
D
12
Q7
RESET
15
High-Speed CMOS Logic Data DL129 -- Rev 6
5
MOTOROLA
MC54/74HC259
OUTLINE DIMENSIONS
-A -
16 9
J SUFFIX CERAMIC PACKAGE CASE 620-10 ISSUE V
-B - C L
1
8
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 4. DIM F MAY NARROW TO 0.76 (0.030) WHERE THE LEAD ENTERS THE CERAMIC BODY. INCHES MIN MAX 0.750 0.785 0.240 0.295 -- 0.200 0.015 0.020 0.050 BSC 0.055 0.065 0.100 BSC 0.008 0.015 0.125 0.170 0.300 BSC 15 0 0.020 0.040 MILLIMETERS MIN MAX 19.05 19.93 6.10 7.49 -- 5.08 0.39 0.50 1.27 BSC 1.40 1.65 2.54 BSC 0.21 0.38 3.18 4.31 7.62 BSC 15 0 1.01 0.51
-T
SEATING - PLANE
N E F G D 16 PL 0.25 (0.010)
M
K M J 16 PL 0.25 (0.010)
M
TB
S
TA
S
DIM A B C D E F G J K L M N
-A -
16 9
N SUFFIX PLASTIC PACKAGE CASE 648-08 ISSUE R
B
1
8
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. DIM A B C D F G H J K L M S INCHES MILLIMETERS MIN MAX MIN MAX 0.740 0.770 18.80 19.55 6.35 0.250 0.270 6.85 3.69 0.145 0.175 4.44 0.39 0.015 0.021 0.53 1.02 0.040 0.070 1.77 0.100 BSC 2.54 BSC 0.050 BSC 1.27 BSC 0.21 0.008 0.015 0.38 2.80 0.110 0.130 3.30 7.50 0.295 0.305 7.74 0 0 10 10 0.020 0.040 0.51 1.01
F S
C
L
-T - H G D 16 PL 0.25 (0.010)
M
SEATING PLANE
K
J TA
M
M
-A -
16 9
D SUFFIX PLASTIC SOIC PACKAGE CASE 751B-05 ISSUE J
-B -
1 8
P 8 PL 0.25 (0.010)
M
B
M
G F
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0 7 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0 7 0.229 0.244 0.010 0.019
K C -T SEATING -
PLANE
R X 45
M D 16 PL 0.25 (0.010)
M
J
T
B
S
A
S
MOTOROLA
6
High-Speed CMOS Logic Data DL129 -- Rev 6
MC54/74HC259
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JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
High-Speed CMOS Logic Data DL129 -- Rev 6
CODELINE
7
*MC54/74HC259/D*
MC54/74HC259/D MOTOROLA


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